Answer the following questions What are the three names used for the difference
ID: 1770546 • Letter: A
Question
Answer the following questions What are the three names used for the difference in the Fermi levels between two metals when the band diagrams of the two metals are shown in the Flatband condition? For a metal-semiconductor junction in which the semiconductor is n-type and the work function of the metal is greater than the semiconductor, is the junction (contact) Schottky or Ohmic? What voltage and/or energy is the barrier of the pnjunction at equilibrium equal to? What equation relates the maximum electric field on the p-type side of the Ra junction to the maximum electric field on the n-type side of the pn junction? For a reverse bias, what bias polarity should be applied to the p-type side and what bias polarity should be applied to the n-type side? Draw the band diagrams of an ppn junction in both the flatband and equilibrium condition. Draw the band diagram of an ppnjunction biased in the on-state condition. Draw a cross section of an pMOSEET Draw the band diagrams of an pMOS in the Elatband Condition and Equilibrium Condition. 1. 2. 3. 4. 5. 6. 7. 8. 9.Explanation / Answer
1. The three methods are,
(i)MOS analysis: If there is no charge present, the flat band voltage simply equals the difference between the metal workfunction.
(ii)Inversion layer charge: The inversion layer charge is proportional to the applied voltage.
There are many more other methods .
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