Suppose we have a p-type Si photoconductor photodector, doped uniformly N(sub a)
ID: 2077024 • Letter: S
Question
Suppose we have a p-type Si photoconductor photodector, doped uniformly N(sub a)= 1x10^16 with a length of 10um and a cross sectional area of A= 1x10^-6 cm^2. A voltage of 1 V is applied to the photoconductor. Assume the carrier lifetimes are Tao(sun n)=Tao(sub p)= 10^-5 s with u(sub n)= 1000 cm^2/v and u(sub p) = 500 cm^2/v for Si.A) for uniform generation rate G(sub L) = 1x10^18 , calculate the photoconductivity
B) calculate the photoconductof gain Suppose we have a p-type Si photoconductor photodector, doped uniformly N(sub a)= 1x10^16 with a length of 10um and a cross sectional area of A= 1x10^-6 cm^2. A voltage of 1 V is applied to the photoconductor. Assume the carrier lifetimes are Tao(sun n)=Tao(sub p)= 10^-5 s with u(sub n)= 1000 cm^2/v and u(sub p) = 500 cm^2/v for Si.
A) for uniform generation rate G(sub L) = 1x10^18 , calculate the photoconductivity
B) calculate the photoconductof gain
A) for uniform generation rate G(sub L) = 1x10^18 , calculate the photoconductivity
B) calculate the photoconductof gain
Explanation / Answer
Solution:-
Suppose we have a p-type Si photoconductor photodector, doped uniformly N(sub a) = 1x10^16 with a length of 10um and a cross sectional area of A= 1x10^-6 cm^2. A voltage of 1 V is applied to the photoconductor. Assume the carrier lifetimes are Tao(sun n)=Tao(sub p)= 10^-5 s with u(sub n)= 1000 cm^2/v and u(sub p) = 500 cm^2/v for Si.
The photoconductivity is given by
=1*1*10^16* 10*1*10^-6 (µ subn +µ subp)/10^-5 = 1*1*(10^16)* 10*1*(10^-6)*(1000+500)/(10^-5)
= 1.5 * 10^19
b) Photoconduct of gain = 1.5 * 10^19/1*10^18 = 1.5*10 = 15