Topic : NANOTECHNOLOGY 8:45 PM ..ooo T-Mobile Wi-Fi K Homework #1 Homerwork #1.p
ID: 2079607 • Letter: T
Question
Topic : NANOTECHNOLOGY 8:45 PM ..ooo T-Mobile Wi-Fi K Homework #1 Homerwork #1.pdf Integrated Nanosystems Processes and Devices Spring Semester Due at 10:30 AM on February 9 Total points: 30 I. Compare wet and dry etching? (5 points) 2. Sketch the profiles showing: (a) purely isotropic etch; (b) isotropic etch with compensated mask; (c) anisotropic etch; (d) isotropic etch with over etch; and (e) isotropic etch with mask erosion. (10 points) 3. In a particular etch process which type(s) of etching process should be used in each of the following cases, if the biggest concems are: (2 points) a) Selectivity. b) Ion bombardment damage. c)Obtaining vertical sidewalls. d)Selectivity and vertical sidewalls. 4. If the degree of anisotropy is 0, as in wet etching, what is the undercut or etch bias when etching a 0.5 um thick film? What is the undercut when the degree of anisotropy is 0.75? (5 Points) Assume no over etch in each case. The degree of anisotropy is given by A 1- Where A is the degree ofanisotropy, VM is the horizontal etch rate thickness, and V is the vertical etch ratethickness. 5. What should be the square opening of the mask on the top of the substrate to get a 2 Hm opening at the bottom? (8 points) Tan (35.26 0.707 and tan (54.74) 414 500 um 54,74 2 um Courses To Do Notifications Messages CalendarExplanation / Answer
1.
Wet etching Dry etching 1.Wet etching is a material removal procedure that use liquid chemicals or etchants to remove resources from a wafer. The exact patters are defined by masks on the wafer 1. In dry etching, plasmas or etchant gas remove the substrate fabric. The response that takes place can be done utilize high kinetic energy of element beam, chemical reaction or a combination of both 2.Where etch rate will be high 2.Where Etch rate will be controllable 3.Where the selectivity high 3.Where selectivity is controllable 4.it is not suitable for smaller size 4. it is suitable for small sizes ( 0.1micro meter) 5.cost is low 5. cost is high 6.Here divectionality is isotropic 6.Here divectionality is anisotropic 7.where the environment for wet etching is water bath 7. where the environment for dry etching is vacuum chamber