Which of the following statements is true? In a PN junction the depletion layer
ID: 2081187 • Letter: W
Question
Which of the following statements is true? In a PN junction the depletion layer is formed only when an external voltage is applied To forward bias a PN junction, the voltage on the n-side should be around 0.7V higher thn the voltage on the p-side The small saturation current in a reverse-biased PN junction is due to thermally generated carriers In a forward-biased PN junction, breakdown can occur due to Zener or avalanche effect For small signals, a forward-biased diode behaves as a temperature-dependent resistor 1 and 3 2 and 4 3 and 5 2 and 5Explanation / Answer
3 and 5 is true.
In 3rd ...diode behaves as open circuit in reverse biase ...but due to thermal energy some holes and electrons wil be there ...they are responsible for small saturation current .
In 5th for small signal...a forward bias diode will be a temperature depend resistor ..because ..we have the operating voltage is low ..and generation or holes and electrons ...is controlled by the temperature also.