in this problem why V_obe caculate like that? isn\'t it correct equation? A Si p
ID: 2084307 • Letter: I
Question
in this problem
why V_obe caculate like that?
isn't it correct equation?
A Si p-n-p transistor has the following properties at room temperature Tn Tp 0.1 ms Dn Dp 10 cm2/s NEE 1019 cm-3 emitter concentration NBE 1016 cm-3 base concentration NC 1016 cm-3 collector concentration WEE emitter width 3 um W metallurgical base width 1.5 Hm distance between base-emitter junction and base- collector junction A cross-sectional area 10-5 cm2 Calculate the neutral base width Wb for VCB E O and VEB E 0.2 V. Repeat for 0.6 V.Explanation / Answer
That's correct,
But the given equation is also correct..
If you calculate answer using equation written by you will result in same value as calculated by another equation.