11. The barrier height is a) the difference between Ec at the interface and Er i

Question

11. The barrier height is a) the difference between Ec at the interface and Er in the bulk when a forward voltage is applied. b) the difference between Eg at the interface and Es in the bulk when a reverse voltage is applied. d) All of the above. 12. The built-in potential (Ma) is equal to 13. For an n-Schottky contact, at an applied voltage- OV a) metal Fermi level semiconductor Fermi level. b) semiconductor Fermi level is lower than metal Fermi level by ga c) semiconductor Fermi level is lower than metal Fermi level by gs d) generally, metal Fermi level > semiconductor Fermi level e) generally, metal Fermi level metal Fermi level. e) metal Fermi level semiconductor Fermi level. e) generally, semiconductor Fermi level

Explanation / Answer

11)c

12)d

13)e is valid bcoz workfuncion of metal >workfunction of semiconductor

14)c

15)c

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