25. For a Schottky contact, if a forward bias Ve is applied, a) the thermionic c

Question

25. For a Schottky contact, if a forward bias Ve is applied, a) the thermionic charge concentration emitted from metal ? semiconductor is kT b) the thermionic charge concentration emitted from semiconductor- metal is kT c) the number of charges emitting from metal to semiconductor > number charges emitting from semiconductor to metal. d) the number of charges emitting from metal to semiconductor metal is c) the number of charges emitting from metal to semiconductor > number charges emitting from semiconductor to metal. d) the number of charges emitting from metal to semiconductor

Explanation / Answer

25) Option B and E are correct.

When a forward bias voltage is applied to the .schottky diode, a large number of free electrons are generated in BOTH the n-type semiconductor and metal.

26) Option B and C are correct.

When a reverse bias voltage is applied to the schottky diode, the depletion width increases. As a result, the electric current stops flowing. However, a small leakage current flows due to the thermally excited electrons in the metal.

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