Please answer the following question Diode 1 n-Region No (cm-3 2 x 1016 Region N
ID: 2304776 • Letter: P
Question
Please answer the following question Diode 1 n-Region No (cm-3 2 x 1016 Region NA (cm-3 2 x 1017 Lp (cm 11.4 x 103 13 Dp (cm2/s) Ln (cm 4.1 x 10-2 34 Dn (cm2/s Diode 2 Region NA (cm3 2 x 1017 n-Region No (cm3 Dp (cm2ls Dn (cm2/s Ln (cm) 4.1 x 10-334 cm 2 x 1016 11.4 x 104 13 Two silicon p-n junction diodes have the properties given in the table above. The doping concentrations in the p and n regions are NA and No, respectively. The minority electrons in the p region have diffusion length Ln and diffusivity Dn. The minority holes in the n region have diffusion length Le and diffusivity RR The temperature is 300 K and the intrinsic carrier concentration is ni- 1.45 x 1010 cm a) Write an equation for the current density (mA/cm2) as a function of voltage for diodes 1 and 2 under AM 1.5G illumination. Calculate the power density (mW/cm2) as a function of voltage for both diodes Assume both are ideal solar cells without any parasitic resistances. Use a value of 1 for non-ideality factor b) Under illumination, for each of diodes 1 and 2, answer the following questions: What is the open circuit voltage (VOC)? What is the maximum power density (mW/cm2). At what voltage and current density is the maximum power density achieved? What is the fill factor? What is the efficiency? What is the optimal load resistance to operate this solar cell at?Explanation / Answer
Half life = 3.800 days
use relation between rate constant and half life of 1st order reaction
k = (ln 2) / k = 0.693/(half life)
= 0.693/(3.800)
= 0.182 days-1
Given:
[Rn]o = 4.0*10^13
use integrated rate law for 1st order reaction
ln[Rn] = ln[Rn]o - k*t
ln[Rn] = ln(4.0*10^13) - 0.182*30
ln[Rn] = 31.320 - 0.182*30
ln[Rn] = 25.849
[Rn] = 1.7*10^11 atoms
Answer: 1.7*10^11 atoms