A quantum well (QW) is made of 100 Å of GaAs sandwiched between two AlAs layers
ID: 2314532 • Letter: A
Question
A quantum well (QW) is made of 100 Å of GaAs sandwiched between two AlAs layers of wide length. Assume that the electrons are confined in the GaAs region and, hence, can move in the x and y directions, but not in the z-direction which is the direction of growth (AlAs-GaAs-AlAs). Find the electron wave function (x,y,z) assuming infinite barrier case. Show all your steps and give values for subband energies.
Now, bandgap of GaAs is 1.42eV and that of AlAs is 2.23eV. Assuming 2/3 of this difference is the conduction band discontinuity EC=(2/3)Eg. Explain how this affects the wave function. Qualitatively draw the wave function for the first two confined states.
Find the density of states for this well and plot it.Assume infinite well.
Explanation / Answer
Friend the question is not understood very well, I urge you to reconsider the question in order to answer it. However base material fails to know about QW
https://arxiv.org/ftp/arxiv/papers/1108/1108.3294.pdf
Data are presented on the conversion (selective conversion) of highcomposition (AlAs) x (GaAs)1xlayers, e.g., in Al x Ga1x AsAlAsGaAs quantum wellheterostructures and superlattices(SLs), into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400°C). Hydrolyzation oxidation of a finescale AlAs(L B )GaAs(L z ) SL (L B +L z 100 Å), or random alloy Al xGa1x As (x0.7), is observed to proceed more slowly and uniformly than a coarsescale ‘‘alloy’’ such as an AlAsGaAs superlattice with L B + L z 200 Å.
Data are presented on the conversion (selective conversion) of highcomposition (AlAs) x (GaAs)1xlayers, e.g., in Al x Ga1x AsAlAsGaAs quantum wellheterostructures and superlattices(SLs), into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400°C). Hydrolyzation oxidation of a finescale AlAs(L B )GaAs(L z ) SL (L B +L z 100 Å), or random alloy Al xGa1x As (x0.7), is observed to proceed more slowly and uniformly than a coarsescale ‘‘alloy’’ such as an AlAsGaAs superlattice with L B + L z 200 Å.