Pattern resolution in semiconductor lithography is limited with light diffractio

Question

Pattern resolution in semiconductor lithography is limited with light diffraction so to achieve finer features (higher resolution) one must compensate for the bending of light and spreading of light resulting from passing through the fine openings of the reticle which make the light de-focused. In order to minimize this de-focusing and maintain 30nm (30 nanometer) resolution one may use: a. shorter wavelength extreme ultraviolet electromagnetic radiation form of "light" down to 13 nm (13 nanometers) which means less diffraction occurs b. reflective Mo-Si mirrors instead of glass c. photon cascade multipliers for minimal backscatter of hyper-energy critical electron plasma d. sub-bias insertion loss for phonon accelerated frequency distribution e. gamma ray induced radiation absorption resonance high-pass filters f. subliminal amorphous existential ventilators g. all of the above h. none of the above i. a and b

Explanation / Answer

Pattern resolution in semiconductor lithography is limited with light diffraction. so to reduce the effect of bending of light and to maintain its focussing nature, the following should be done in semiconductor lithography:

a) shorter wavelength extreme ultraviolet electromagnetic radiation form of light down to 13 nm which means less diffraction occurs
b) reflective Mo-SI mirrors instead of glass

hence the answer is
i. both a and b

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