In the sputtering system, which species is to dislodge or eject an atom at elect
ID: 2082455 • Letter: I
Question
In the sputtering system, which species is to dislodge or eject an atom at electrode? Why? The electrons, because electrons have large momentum. Ions, because ions have large momentum. The electrons, because electron have small momentum. Ions, because ions have small momentum. In the sputtering system, which following is correct? The electrons move toward cathode, and ions move toward anode. The electrons move toward cathode, and ions move toward cathode. The electrons move toward anode, and ions move toward cathode. The electrons move toward anode, and ions move toward anode. In the sputtering system following is correct to describe morphology of sputtering? Choose two correct answers. At high on energy, the film will be amorphous, highly porous solid with a low mass density, Metal films deposited in this can readily oxidize when exposed to air and may also have high resistivity. At high energy, polycrystalline will increased grain size. At low ion energy, the film will be an amorphous, highly porous solid with a low mass density. Metal films deposited in this region can readily oxidize when exposed to air and high resistivity. At low ion energy, polycrystalline will be formed with increased grain size. compared evaporator with sputtering, which one has a better step coverage? What are reasons? Choose two correct answers. Sputtering has a better step coverage, atoms ejected from cathode has additional energy for surface mobility, improving step coverage. Thermal evaporator has a better step coverage, because atoms ejected from cathode has additional energy for surface mobility, improving step coverage. Sputtering can rotate the substrate, providing a better step coverage Thermal evaporator can rotate the substrate, providing a better step coverage In the sputtering system, how to further improve step coverage? Choose two correct answers Rotate substrate. Inserts a plate with low aspect ratio holes just above the wafer. Reduce substrate temperature. Use large target.Explanation / Answer
1. Electrons have more momentum than the Ions. so, OptionA
2. Cathode is the one where current leaves the device so, that electrons always moves towards Cathode Option A. Ions Releases electron and they flow with the flow of current
3.A&B.high density phase can only be formed under high pressure. However, during the growth of a polycrystalline film via atomic deposition, a compressive residual stress onpolycrystalline grains due to incorporation of atoms in the grain boundaries can form high densitymaterial.
4.A&C. Cathode emitts the atoms in the direction energy and will accumulate at anode easily. Sputtering material will be rotated according to the concentrations inside it and according to the ion formation.
5.A. By rotating substrate you can get even distribution of poly crystalline formation