Please answer the following Question: Subject: Fundementals of Solid State Devic

Question

Please answer the following Question:

Subject: Fundementals of Solid State Devices

5· (12 pts) Multiple choice, choose one answer only for each part (you may mark your answer on this page and scan it if you wish) a) (3 pts) What is the main advantage of GaAs MESFETs over Si MOSFETs (choose 1) a)Higher integration density b)Higher frequency performance for microwave applications c) Higher gate resistance d)Higher gate voltage range b) (3 pts) An LED is made of AlGaAs with a bandgap of 1.8 eV. What is the peak wavelength of light emitted from the diode (choose 1): a) 1221 nm b) 873 nm c 689 nm d)573 nm c) (3 pts) A Gunn diode works on the principal of (choose 1): a)Negative resistance due to electron intervalley transfer at high fields b) Negative resistance due to interband tunneling c)Transit time delays resulting in negative resistance at high frequencies d)Impact ionization causing negative resistance d) (3 pts) An SCR has what advantage compared to a basic thyristor (choose 1): a)Easier fabrication b) Faster switching response c)Less sensitive to false switching due to ionizing radiation d)A gate terminal that allows it to be switched from the off to the on state

Explanation / Answer

Answer:-a) Option b is correct. GaAs FETs are used for high frequency operations.

Answer:-b) Option c is correct. E = 1.8 eV = 1.8 x 1.6 x 10-19 J, hence wavelength
lambda = (3 x 108 x 6.626 x 10-34 )/(1.8 x 1.6 x 10-19) m
= 6.90 x 10-7 m

So lamda = 690 nm

Answer:-c) Option a is correct. Gunn diode works on the principle of negative resistance due to electron intervalley transfer at high fields.

Answer:-d) Option d is correct.

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