Plasma etching is essential to the fine-line pattern transfer in current semicon
ID: 3319936 • Letter: P
Question
Plasma etching is essential to the fine-line pattern transfer in current semiconductor processes. An article gives the accompanying data (read from a graph) on chlorine flow (x, in SCCM) through a nozzle used in the etching mechanism and etch rate (y, in 100 A/min).
The summary statistics are
(a) Does the simple linear regression model specify a useful relationship between chlorine flow and etch rate? (Use = 0.05.)
State the appropriate null and alternative hypotheses.
H0: 1 0
Ha: 1 = 0H0: 1 = 0
Ha: 1 < 0 H0: 1 = 0
Ha: 1 0H0: 1 = 0
Ha: 1 > 0 [Correct]
Calculate the test statistic and determine the P-value. (Round your test statistic to two decimal places and your P-value to three decimal places.)
(b) Estimate the true average change in etch rate associated with a 1-SCCM increase in flow rate using a 95% confidence interval. (Round your answers to three decimal places.)
(_______ , _______)100 A/min
(c) Calculate a 95% CI for
Y · 3.0,
the true average etch rate when flow = 3.0. (Round your answers to three decimal places.)
(_______ , _______)100 A/min
(d) Calculate a 95% PI for a single future observation on etch rate to be made when flow = 3.0. (Round your answers to three decimal places.)
(_______ , _______)100 A/min
x 1.5 1.5 2.0 2.5 2.5 3.0 3.5 3.5 4.0 y 22.0 24.5 25.0 31.0 33.5 40.0 40.5 48.0 48.5Explanation / Answer
Ha: 1 0H0: 1 = 0
t=10.5069
p-value =0.0000154
b)
c)
predict(mod,data.frame(x=3),interval="confidence")
fit lwr upr
1 38.37179 36.15669 40.5869
d)
predict(mod,data.frame(x=3),interval="prediction")
fit lwr upr
1 38.37179 31.80073 44.94286