Plasma etching is essential to the fine-line pattern transfer in current semicon
ID: 3396192 • Letter: P
Question
Plasma etching is essential to the fine-line pattern transfer in current semiconductor processes. An article gives the accompanying data (read from a graph) on chlorine flow (x, in SCCM) through a nozzle used in the etching mechanism and etch rate (y, in 100 A/min).
The summary statistics are
(a) Does the simple linear regression model specify a useful relationship between chlorine flow and etch rate? (Use = 0.05.)
State the appropriate null and alternative hypotheses.
1
State the conclusion in the problem context.
4
5 , 6
100 A/min
Interpret the interval.
7
Y · 3.0,
the true average etch rate when flow = 3.0. (Round your answers to three decimal places.)
8 , 9
100 A/min
(d) Calculate a 95% PI for a single future observation on etch rate to be made when flow = 3.0. (Round your answers to three decimal places.)
10 , 11
100 A/min
(e) Would the 95% CI and PI when flow = 2.5 be wider or narrower than the corresponding intervals of parts (c) and (d)? Answer without actually computing the intervals.
12
13
x 1.5 1.5 2.0 2.5 2.5 3.0 3.5 3.5 4.0 y 22.0 24.5 25.5 29.0 33.5 39.5 40.5 46.0 49.0Explanation / Answer
H0: 1 = 0
Ha: 1 > 0
Fail to reject H0. This model does specify a useful relationship between chlorine flow and etch rate.