Indium Gallium Arsenide is a compound semiconductor with a controllable composit
ID: 3161846 • Letter: I
Question
Indium Gallium Arsenide is a compound semiconductor with a controllable composition. It has the chemical formula of InxGa1-xAs. The parameter x can vary between 0 and 1 (0 x 1). Irrespective of the value of x, the atomic ratio of (InxGa1-x) to As is 1. The room-temperature bandgap energy of GaAs is 1.39 eV, and that of InAs is 0.33 eV.
2. Indium Gallium Arsenide is a compound semiconductor with a controllable composition. It has the chemical formula of InxGa1-As. The parameter x can vary between 0 and l (0 SxS1). Irrespective of the value of x, the atomic ratio of (InxGal.x) to As is 1. The room-temperature bandgap energy of GaAs is 1.39 eV, and that of InAs is 0.33 eV. A. Draw well-labeled, schematic, energy-band diagrams characteristic of GaAs and InAs. B. Calculate the maximum wavelength of electromagnetic radiation (i.e. light, but not necessarily visible light that can be transmitted by GaAs and by InAs. C. Briefly explain why wavelengths shorter than those you calculate are not transmitted. D. If the gap energy is linearly related to composition, what gap energy would you expect forExplanation / Answer
Solution :-
a) Schematic representatives in terms of energy-band diagrams characteristic of GaAs and InAs.
b) -Maximum wavelength of electromagnetic radiation that can be transmitted by GaAs :-
From the plot, corresponding to band energy of 1.39 eV, wavelngth = 200 A
-Maximum wavelength of electromagnetic radiation that can be transmitted by GaAs :-
From the plot, corresponding to band energy of 0.33 eV, wavelngth =200 A
c) The wavelngths shorter than those we calculate are not transmitted because of the band energy restrictions.
d) If the gap energy is linearly related to compsoition, then the gap energy we expect for ((In0.5) Ga0.5)As will be twice of individual component.